IRFP064NPBF 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IRFP064NPBF
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 200W
- Total Gate Charge (Qg@Vgs): 170nC@10V
- Drain Source Voltage (Vdss): 55V
- Input Capacitance (Ciss@Vds): 4000pF@25V
- Continuous Drain Current (Id): 110A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,59A
- Package: TO-247
- Manufacturer: Infineon Technologies